052-6356 rev c 3-2012 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics min typ max 600 3 4.5 6 2.2 2.7 2.1 275 2750 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 1.0ma) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges symbol v ces v ge v gem i c1 i c2 i cm ssoa p d t j ,t stg t l ratings 600 2030 5627 65 65a @ 600v 250 -55 to 150 300 parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 25c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. unit volts amps watts c microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed . t o - 2 4 7 g c e the power mos 7 ? igbt used in this resonant mode combi is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. resonant mode combi igbt ? c e g features low conduction loss low gate charge ultrafast tail current shutoff low forward diode voltage (v f ) ultrasoft recovery diode ssoa rated rohs compliant typical applications induction heating welding medical high power telecom resonant mode phase shifted bridge volts unit a na apt15gp60bdl(g ) 600v, 15a, v ce(on) = 2.2v typical downloaded from: http:///
052-6356 rev c 3-2012 apt15gp60bdl(g) dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 15a t j = 150c, r g = 5 ,v ge = 15v, l = 100 h,v ce = 600v inductive switching (25c) v cc = 400v v ge = 15v i c = 15a r g = 5 t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 15a r g = 5 t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (with diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (with diode) 5 5 turn-off switching energy 6 6 min typ max 1685 210 15 7.5 55 12 15 65 8 12 29 58 130 152 121 8 12 69 88 130 267 268 unit pf v nc a ns j ns j unit c/w gm min typ max .50 1.00 5.90 characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and diode leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. a combi device is used for the clamping diode as shown in the e on2 test circuit. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) microsemi reserves the right to change, without notice, the speci? cations and information contained herein. downloaded from: http:///
052-6356 rev c 3-2012 typical performance curves apt15gp60bdl(g) v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 0 10 20 30 40 50 60 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 t j = 25c. 250 s pulse test <0.5 % duty cycle t c =-55c t c =125c t c =25c v ce = 480v v ce = 300v v ce = 120v v ge = 10v. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 15a t j = 25c t j = 25c t j = -55c t j = 125c t c =-55c t c =25c t c =125c 250 s pulse test <0.5 % duty cycle i c = 7.5a i c = 15a i c =30a i c =30a i c = 7.5a 3025 20 15 10 50 100 8060 40 20 0 3.5 3 2.5 2 1.5 1 0.5 0 1.2 1.151.10 1.05 1.0 0.95 0.9 0.85 0.8 3025 20 15 10 50 1614 12 10 86 4 2 0 3.5 3 2.5 2 1.5 1 0.5 0 8070 60 50 40 30 20 10 0 i c = 15a downloaded from: http:///
052-6356 rev c 3-2012 apt15gp60bdl(g) t j = 125c, v ge = 10v or 15v t j = 25c, v ge = 10v or 15v v ce = 400v r g = 5 l = 100 h v ge = 15v,t j =125c v ge = 15v v ge = 10v v ge =10v,t j =125c v ge = 10v,t j =25c v ge = 15v,t j =25c t j = 25c, v ge = 10v or 15v i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature r g = 5 , l = 100 h, v ce = 400v r g = 5 , l = 100 h, v ce = 400v v ce = 400v l = 100 h r g = 5 t j = 25 or 125c,v ge = 15v t j = 25 or 125c,v ge = 10v v ce = 400v v ge = +15v r g = 5 switching energy losses ( j) e on2 , turn on energy loss ( j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses ( j) e off , turn off energy loss ( j) t f, fall time (ns) t d (off) , turn-off delay time (ns) v ce = 400v v ge = +15v t j = 125c v ce = 400v l = 100 h r g = 5 t j =125c, v ge =15v t j = 125c, v ge = 10v or 15v t j =125c,v ge =10v t j = 25c, v ge =10v t j = 25c, v ge =15v 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 0 5 10 15 20 25 30 5 10 15 20 25 30 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 1816 14 12 10 86 4 2 0 3025 20 15 10 50 700600 500 400 300 200 100 0 900800 700 600 500 400 300 200 100 0 8070 60 50 40 30 20 10 0 100 8060 40 20 0 700600 500 400 300 200 100 0 700600 500 400 300 200 100 0 e off 30a e on2 30a e on2 7.5a e off 15a e on2 15a e off 7.5a e on2 7.5a e off 15a e on2 15a e on2 30a e off 30a e off 7.5a v ce = 400v t j = 25c or 125c r g = 5 l = 100 h downloaded from: http:///
052-6356 rev c 3-2012 typical performance curves apt15gp60bdl(g) 0.600.50 0.40 0.30 0.20 0.10 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z q jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 4,0001,000 500100 5010 7060 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 c ies c oes max max1 max 2 max1 d(on)rd(off)f diss cond max 2 on 2 off jc diss jc fm i n ( f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = c res figure 19b, transient thermal impedance model 5 10 15 20 25 30 35 40 45 50 292100 5010 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 5 w 0.216 0.284 0.0060 0.161 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink,sink to ambient, etc. set to zero when modeling only the case to junction. z ext downloaded from: http:///
052-6356 rev c 3-2012 apt15gp60bdl(g) t t j = 125 c gate voltage collector voltage collector current 0 90% 90% t d(off) t f 10% switching energy figure 22, turn-on switching waveforms and de? nitions figure 23, turn-off switching waveforms and de? nitions *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit 10% collector current collector voltage gate voltage t d(on) 90% t r 5% 5 % 10% switching energy t j = 125 c i c a d.u.t. apt15df60 v ce figure 21, inductive switching test circuit v cc apt30dl60 downloaded from: http:///
052-6356 rev c 3-2012 characteristic / test conditions maximum average forward current (t c = 126c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 30a forward voltage i f = 60a i f = 30a, t j = 125c static electrical characteristics unit amps unit volts min typ max 1.25 1.6 2.0 1.25 apt15gp60bdl(g) 3051 320 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. ultrafast soft recovery anti-parallel diode min typ max - 64 - 317 - 962 - 7 - - 561 - 2244 - 9 - - 264 - 3191 - 26 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 30a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f =30a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 30a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c dynamic characteristics apt15gp60bdl(g) figure 1b, transient thermal impedance model rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: z jc , thermal impedance (c/w) dissipated powe r (watts ) t j (c) t c (c) z ext are the external therma l impedances: case to sink, sink to ambient, etc. set to zero when modeling onl y the case to junction. z ext .112 .437 .450 .0005 .0016 0.263 downloaded from: http:///
052-6356 rev c 3-2012 apt15gp60bdl(g) 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700 800 0 200 400 600 800 1000 0 4 8 12 16 20 24 28 32 0 200 400 600 800 1000 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 200 400 600 800 1000 duty cycle = 0.5 t j = 126c i rrm q rr t rr 60a 30a 60a 30a t j = 55c t j = 150c v f , anode-to-cathode voltage (v) figure 2, forward current vs. forward voltage i f , forward current (a) t j = 25c t j = 125c -di f /dt, current rate of change (a/ s ) figure 3, reverse recovery time vs. current rate of change t rr , collector current (a) q rr , reverse recovery charge (nc) t j , junction temperature (c) figure 6, dynamic parameters vs junction temperature k f , dynamic parameters (normalized to 1000a/ s) i rrm , reverse recovery current (a) case temperature (c) figure 7, maximum average forward current vs. case temperature i f(av) (a) 0 50 100 150 200 250 300 1 10 100 400 v r , reverse voltage (v) figure 8, junction capacitance vs. reverse voltage c j , junction capacitance (pf) t j = 125c v r = 400v t j = 125c v r = 400v -di f /dt, current rate of change (a/ s ) figure 4, reverse recovery charge vs. current rate of change -di f /dt, current rate of change (a/ s ) figure 5, reverse recovery current vs. current rate of change t j = 125c v r = 400v 30a 15a 15a 15a 60a typical performance curves downloaded from: http:///
052-6356 rev c 3-2012 to-247 (b) package outline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) gate 5.45 (.215) bsc dimensions in millimeters and (inches ) 2-plcs. collector (cathode) emitter (anode) collector (cathode) 4 3 1 2 5 5 zer o 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current . t rr - revers e r ecovery time, measured from zero crossing wher e diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero . figure 9. diode test circui t figure 10, diode reverse recovery waveform and definition s 0.25 i rrm current transformer di f /dt adjus t d.u.t. +18v 0v t rr / q rr wavefor m slope = di m / dt 6 di m /dt - maximum rate of current increase during the trailing portion of t rr. 6 v r downloaded from: http:///
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